4-129 up to 6 ghz low noise silicon bipolar transistor technical data features ? low noise figure: 1.4 db typical at 1.0 ghz 1.7 db typical at 2.0 ghz ? high associated gain: 18.0 db typical at 1.0 ghz 13.0 db typical at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? surface mount plastic package ? tape-and-reel packaging option available [1] AT-41486 86 plastic package note: 1. refer to tape-and-reel packaging for semiconductor devices. description hewlett-packards AT-41486 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the AT-41486 is housed in a low cost surface mount .085" diameter plastic package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. applications include use in wireless systems as an lna, gain stage, buffer, oscillator, and mixer. an optimum noise match near 50 w at 900 mhz, makes this device easy to use as a low noise amplifier. the AT-41486 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 1 4 3 2 emitter base emitter collector pin connections 5965-8928e 414
4-130 AT-41486 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2,3] mw 500 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [2,4] : q jc = 165 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6 mw/ c for t c > 68 c. 4. see measurements section thermal resistance for more information. part number ordering information part number increment comments AT-41486-tr1 1000 reel AT-41486-blk 100 bulk note: for more information, see tape and reel packaging for semiconductor devices. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 17.5 f = 4.0 ghz 11.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 18.0 v ce = 8 v, i c = 25 ma g 1 db 1 db compressed gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 13.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.4 1.8 f = 2.0 ghz 1.7 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 17.0 18.0 f = 2.0 ghz 13.0 f = 4.0 ghz 9.0 f t gain bandwidth product: v ce = 8 v, i c = 25 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.25 note: 1. for this test, the emitter is grounded.
4-131 AT-41486 typical performance, t a = 25 c frequency (ghz) figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) i c (ma) figure 2. optimum noise figure and associated gain vs. collector current and collector voltage. f = 2.0 ghz. gain (db) 0 1020 3040 figure 3. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v. 10 v 4 v frequency (ghz) figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 25 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) gain (db) i c (ma) figure 4. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v, f = 2.0 ghz. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 3040 p 1db g 1db 24 21 18 15 12 9 6 3 0 8 6 4 2 0 nf (db) 4 3 2 1 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 15 14 13 12 11 g a g a nf o nf o g a nf o nf 50 6 v 0 1020 3040 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 6 4 2 0 nf o (db) 16 14 12 10 8 i c (ma) figure 6. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 3040 1.0 ghz 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 10 v 4 v 6 v
4-132 AT-41486 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .74 -38 28.1 25.46 157 -39.6 .011 68 .94 -12 0.5 .59 -127 22.0 12.63 107 -30.2 .031 47 .60 -29 1.0 .56 -168 16.8 6.92 84 -27.7 .041 46 .49 -29 1.5 .57 169 13.5 4.72 69 -26.2 .049 49 .45 -32 2.0 .62 152 11.1 3.61 56 -24.8 .058 43 .42 -39 2.5 .63 142 9.3 2.91 47 -23.4 .068 52 .40 -42 3.0 .64 130 7.6 2.41 37 -22.2 .078 52 .39 -50 3.5 .68 122 6.3 2.06 26 -20.6 .093 51 .37 -60 4.0 .71 113 5.1 1.80 16 -19.5 .106 48 .35 -70 4.5 .74 105 4.0 1.59 7 -18.0 .125 48 .35 -84 5.0 .77 99 3.1 1.42 -4 -17.2 .139 43 .35 -98 5.5 .79 93 2.0 1.27 -13 -16.3 .153 38 .35 -114 6.0 .81 87 1.1 1.13 -22 -15.4 .170 34 .35 -131 AT-41486 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .50 -75 32.0 40.01 142 -41.3 .009 54 .85 -17 0.5 .55 -158 23.2 14.38 97 -34.1 .020 48 .51 -24 1.0 .57 177 17.5 7.50 78 -29.9 .032 61 .46 -24 1.5 .57 161 14.1 5.07 65 -27.3 .043 62 .44 -28 2.0 .59 148 11.5 3.75 53 -24.8 .058 59 .43 -35 2.5 .61 139 9.6 3.02 45 -22.9 .072 58 .40 -41 3.0 .65 128 8.0 2.52 34 -21.6 .083 57 .38 -49 3.5 .70 121 6.7 2.17 24 -20.1 .099 56 .36 -59 4.0 .74 113 5.7 1.92 14 -18.8 .115 52 .34 -72 4.5 .78 107 4.7 1.72 3 -17.6 .132 47 .32 -87 5.0 .78 102 3.7 1.53 -8 -16.6 .149 42 .31 -106 5.5 .78 96 2.7 1.36 -19 -15.4 .169 36 .31 -125 6.0 .76 91 1.6 1.21 -29 -14.5 .188 31 .33 -144 a model for this device is available in the device models section. AT-41486 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.3 .12 3 0.17 0.5 1.3 .10 16 0.17 1.0 1.4 .04 43 0.16 2.0 1.7 .12 -145 0.16 4.0 3.0 .44 -99 0.40
4-133 86 plastic package dimensions 4 0.51 0.13 (0.020 0.005) 2.34 0.38 (0.092 0.015) 2.67 0.38 (0.105 0.15) 1 3 2 2.16 0.13 (0.085 0.005) dimensions are in millimeters (inches) 1.52 0.25 (0.060 0.010) 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 0.30 min (0.012 min) c l 45 5 typ. 8 max 0 min
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